BD243B transistor equivalent, silicon npn power transistor.
*Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S.
*DC Current Gain -hFE =30(Min)@ IC= 0.3A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C
*Complement to Type BD244/A/B/C
*Minimum Lot-to-Lot variations for rob.
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